Corrosion and cell adhesion behavior of TiN-coated and ion-nitrided titanium for dental applicationsHUANG, Her-Hsiung; HSU, Chu-Hui; PAN, Szu-Jung et al.Applied surface science. 2005, Vol 244, Num 1-4, pp 252-256, issn 0169-4332, 5 p.Conference Paper

EXAFS investigation of laser nitridation and laser carburization of siliconCARPENE, E; FLANK, A. M; TRAVERSE, A et al.Journal of physics. D, Applied physics (Print). 2002, Vol 35, Num 12, pp 1428-1432, issn 0022-3727Article

AFM and XPS studies of a homoepitaxial diamond (001) surface nitrided using 500-eV N⁺₂ ion beamKUSUNOKI, I; IGARI, Y; ISHIDZUKA, S et al.Diamond and related materials. 2001, Vol 10, Num 9-10, pp 1676-1680, issn 0925-9635Conference Paper

The growth chemistry and interfacial properties of silicon oxynitride and metal oxide ultrathin films on siliconLU, H. C; GUSEV, E; YASUDA, N et al.Applied surface science. 2000, Vol 166, pp 465-468, issn 0169-4332Conference Paper

An XPS study of the effect of nitrogen exposure time and temperature on the GaAs(001) surface using atomic nitrogenHILL, P; LU, J; HAWORTH, L et al.Applied surface science. 1998, Vol 123-24, pp 126-130, issn 0169-4332Conference Paper

Dependence of nitriding degree of Ti surface by non-LTE nitrogen plasma on various plasma parametersKOBORI, H; KOIKE, S; WATANABE, S et al.Thin solid films. 2004, Vol 457, Num 1, pp 69-77, issn 0040-6090, 9 p.Conference Paper

Study on compound layer formed during plasma nitrocarburizing of AISI 5140 steelALSARAN, A; KARAKAN, M; CELIK, A et al.Journal of materials science letters. 2003, Vol 22, Num 24, pp 1759-1761, issn 0261-8028, 3 p.Article

Reactive surface processing by irradiation with excimer laser, Nd:YAG laser, free electron laser and Ti:sapphire laser in nitrogen atmosphereCARPENE, E; SCHAAF, P; HAN, M et al.Applied surface science. 2002, Vol 186, Num 1-4, pp 195-199, issn 0169-4332Conference Paper

Study of InP(100) surface nitridation by x-ray photoelectron spectroscopyBIDEUX, L; OULD-METIDJI, Y; GRUZZA, B et al.Surface and interface analysis. 2002, Vol 34, Num 1, pp 712-715, issn 0142-2421Conference Paper

Cathode sputtering as a pre-treatment for gas nitridingBARANOWSKA, J; SZCZECINSKI, K; WYSIECKI, M et al.Vacuum. 2001, Vol 63, Num 4, pp 517-522, issn 0042-207XConference Paper

Nanometer-scale solute segregation at heterophase interfaces and microstructural evolution of molybdenum nitride precipitatesISHEIM, Dieter; SIEM, Ellen J; SEIDMAN, David N et al.Ultramicroscopy. 2001, Vol 89, Num 1-3, pp 195-202, issn 0304-3991Conference Paper

Formation of vanadium nitride by rapid thermal processingGALESIC, I; KOLBESEN, B. O.Thin solid films. 1999, Vol 349, Num 1-2, pp 14-18, issn 0040-6090Article

X-ray photoelectron study in the initial stage of oxynitridation process by excited nitrogen and oxygenSAITO, Y; IGUCHI, S.Applied surface science. 1998, Vol 130-32, pp 187-191, issn 0169-4332Conference Paper

AES analysis of nitridation of Si(100) by 2-10 keV N₂⁺ ion beamsPAN, J. S; WEE, A. T. S; HUAN, C. H. A et al.Applied surface science. 1997, Vol 115, Num 2, pp 166-173, issn 0169-4332Article

Initial stages of nitridation of Si(111) surfaces : X-ray photoelectron spectroscopy and scanning tunneling microscopy studiesTABE, M; YAMAMOTO, T.Surface science. 1997, Vol 376, Num 1-3, pp 99-112, issn 0039-6028Article

Nitridation of Al₂O₃ and GaAs surfaces by control enhanced ECR plasmaMUTOH, H; O'KEEFFE, P; DEN, S et al.Applied surface science. 1997, Vol 113114, pp 622-626, issn 0169-4332Conference Paper

XPS study of the reaction of the Si(100) surface with a C₂H₄ beamTAKAGAKI, T; IGARI, Y; TAKAOKA, T et al.Applied surface science. 1996, Vol 92, Num 1-4, pp 287-290, issn 0169-4332Conference Paper

Phase-change heat transfer in laser transformation hardening by moving Gaussian rectangular heat sourceLEUNG, M.Journal of physics. D, Applied physics (Print). 2001, Vol 34, Num 24, pp 3434-3441, issn 0022-3727Article

Mécanismes d'oxynitruration thermique du silicium et de la silice sous monoxyde d'azote = Mechanisms of silicon and silica thermal oxynitridation by nitric oxideGosset, Laurent; Rigo, Serge.2000, 234 p.Thesis

| microstructural characterization of laser hardened steel surfacesOBERGFELL, K; SCHULZE, V; VOHRINGER, O et al.Materials science forum. 2000, pp 429-434, issn 0255-5476, isbn 0-87849-855-9Conference Paper

Oxynitridation of Si(100) surface with thermally excited N₂O gasENTA, Y; SUTO, K; TAKEDA, S et al.Thin solid films. 2006, Vol 500, Num 1-2, pp 129-132, issn 0040-6090, 4 p.Article

Growth of nitrided layer after cathode sputteringBARANOWSKA, J; SZCZECINSKI, K; WYSIECKI, M et al.Vacuum. 2003, Vol 70, Num 2-3, pp 293-297, issn 0042-207X, 5 p.Conference Paper

Surface modification of chalcogenide glasses by N₂ plasma treatmentCHEN GUORONG; HU ZHENG; XU JUN et al.Journal of non-crystalline solids. 2001, Vol 288, Num 1-3, pp 226-229, issn 0022-3093Article

Study of carbon nitride films deposited using a Hall-type ion sourceBACAL, M; PERRIERE, J; TANGUY, M et al.Journal of physics. D, Applied physics (Print). 2000, Vol 33, Num 19, pp 2373-2378, issn 0022-3727Article

Preparation of Ge₃N₄ films on the germanium surfaceNAKHUTSRISHVILI, I. G; DZHISHIASHVILI, D. A; MIMINOSHVILI, E. B et al.Inorganic materials. 2000, Vol 36, Num 11, pp 1125-1126, issn 0020-1685Article